COPOER New Original IRF640 IRF 640 F640 IC Chips N-CH 200V 18A 125W TO-220 Mosfet MOS DIP Transistor Electronic Components BOM
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Attributes
POWER MOSFETType
MOSFET driverApplication
Throught HolePackage Type
Through HoleMounting Type
-FET Feature
DatasheetMedia Available
Manufacturer Part Number:IRF640
Brand Name:COPOER
Place of Origin:Guangdong, China
Package / Case:TO-220-3
Mfg Date Code:New
Supplier Type:Original Manufacturer, ODM, Agency, Retailer
Cross Reference:-
Current - Collector (Ic) (Max):8.5A
Voltage - Collector Emitter Breakdown (max):600V
Vce Saturation (Max) @ Ib, Ic:-
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Power - Max:38W
Frequency - Transition:-
Resistor - Base (R1):-
Resistor - Emitter Base (R2):-
FET Type:N-Channel
Drain to Source Voltage (Vdss):200V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Rds On (Max) @ Id, Vgs:180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 0.25mA
Gate Charge (Qg) (Max) @ Vgs:72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1560pF @ 25V
Frequency:-
Current Rating (Amps):-
Noise Figure:-
Power - Output:-
Voltage - Rated:-
Drive Voltage (Max Rds On, Min Rds On):10V
Vgs (Max):±20V
IGBT Type:-
Vce(on) (Max) @ Vge, Ic:2.6V @ 15V, 5A
Input Capacitance (Cies) @ Vce:-
Input:-
NTC Thermistor:-
Voltage - Breakdown (V(BR)GSS):--
Current - Drain (Idss) @ Vds (Vgs=0):-
Current Drain (Id) - Max:-
Voltage - Cutoff (VGS off) @ Id:-
Resistance - RDS(On):-
Voltage - Output:-
Voltage - Offset (Vt):-
Current - Gate to Anode Leakage (Igao):-
Current - Valley (Iv):-
Current - Peak:-
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Payment:PaypalTTWestern Unionalibaba Trade Assurance
Warranty:365days
Key attributes
Type
POWER MOSFET
Application
MOSFET driver
Package Type
Throught Hole
Mounting Type
Through Hole
FET Feature
-
Media Available
Datasheet
Supplier Type
Original Manufacturer, ODM, Agency, Retailer
Power - Max
38W
Package / Case
TO-220-3
Manufacturer Part Number
IRF640
Brand Name
COPOER
Place of Origin
Guangdong, China
Mfg Date Code
New
Cross Reference
-
Current - Collector (Ic) (Max)
8.5A
Voltage - Collector Emitter Breakdown (max)
600V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Frequency - Transition
-
Resistor - Base (R1)
-
Resistor - Emitter Base (R2)
-
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 0.25mA
Gate Charge (Qg) (Max) @ Vgs
72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1560pF @ 25V
Frequency
-
Current Rating (Amps)
-
Noise Figure
-
Power - Output
-
Voltage - Rated
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 5A
Input Capacitance (Cies) @ Vce
-
Input
-
NTC Thermistor
-
Voltage - Breakdown (V(BR)GSS)
--
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Resistance - RDS(On)
-
Voltage - Output
-
Voltage - Offset (Vt)
-
Current - Gate to Anode Leakage (Igao)
-
Current - Valley (Iv)
-
Current - Peak
-
Shipping by
DHL\UPS\Fedex\EMS\HK Post\More
Payment
PaypalTTWestern Unionalibaba Trade Assurance
Warranty
365days
Packaging and delivery
Packaging Details
Standard package
Port of dispatch
Shenzhen
Selling Units
Single item
Supply capacity
Supply Ability
10000 pieces per Month
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
Minimum order quantity: 5 pieces
$0.18-0.35Quantity
Shipping
Shipping fee and delivery date to be negotiated. Chat with supplier now for more details.
Item subtotal
$0.00 - $0.00
Shipping total
To be negotiated
Subtotal
$0.00 - $0.00
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