Jeking High Quality TO-247 Mosfet 600V 60A Transistor NCE60TD60BT
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(1582 reviews)






Attributes
NCE60TD60BTModel Number
IGBT TransistorType
Original brandBrand Name
Throught HolePackage Type
IGBT TransistorDescription
Guangdong, ChinaPlace of Origin
Package / Case:TO-247-3
Operating Temperature:-55~150C
Series:NCE60TD60BT
D/C:New
Application:various
Supplier Type:Original Manufacturer, ODM, Agency, -
Cross Reference:-
Media Available:Datasheet, Photo
Current - Collector (Ic) (Max):-
Voltage - Collector Emitter Breakdown (max):-
Vce Saturation (Max) @ Ib, Ic:-
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Power - Max:-
Frequency - Transition:-
Mounting Type:Through Hole
Resistor - Base (R1):-
Resistor - Emitter Base (R2):-
FET Type:-
FET Feature:Standard
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:-
Frequency:-
Current Rating (Amps):-
Noise Figure:-
Power - Output:-
Voltage - Rated:-
Drive Voltage (Max Rds On, Min Rds On):-
Vgs (Max):-
IGBT Type:-
Configuration:-
Vce(on) (Max) @ Vge, Ic:-
Input Capacitance (Cies) @ Vce:-
Input:-
NTC Thermistor:-
Voltage - Breakdown (V(BR)GSS):-
Current - Drain (Idss) @ Vds (Vgs=0):-
Current Drain (Id) - Max:-
Voltage - Cutoff (VGS off) @ Id:-
Resistance - RDS(On):-
Voltage - Output:-
Voltage - Offset (Vt):-
Current - Gate to Anode Leakage (Igao):-
Current - Valley (Iv):-
Current - Peak:-
Transistor Type:IGBT Transistor
Mounting Type:Through Hole
Product Name::NCE60TD60BT
Type::IGBT Transistor
Mounting style:Through Hole
Package / Case::TO-247-3
MOQ:10 PC
working temperature:-55℃~+150℃
LEAD TIME:3-5 Days
Warranty:30-90 Days
Shipping BY:DHL\UPS\Fedex\EMS\HK Post
Payment:Paypal\TT\Western Union
Key attributes
Model Number
NCE60TD60BT
Type
IGBT Transistor
Brand Name
Original brand
Package Type
Throught Hole
Description
IGBT Transistor
Place of Origin
Guangdong, China
Package / Case
TO-247-3
Operating Temperature
-55~150C
Series
NCE60TD60BT
D/C
New
Application
various
Supplier Type
Original Manufacturer, ODM, Agency, -
Cross Reference
-
Media Available
Datasheet, Photo
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
-
Frequency - Transition
-
Mounting Type
Through Hole
Resistor - Base (R1)
-
Resistor - Emitter Base (R2)
-
FET Type
-
FET Feature
Standard
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Frequency
-
Current Rating (Amps)
-
Noise Figure
-
Power - Output
-
Voltage - Rated
-
Drive Voltage (Max Rds On, Min Rds On)
-
Vgs (Max)
-
IGBT Type
-
Configuration
-
Vce(on) (Max) @ Vge, Ic
-
Input Capacitance (Cies) @ Vce
-
Input
-
NTC Thermistor
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Resistance - RDS(On)
-
Voltage - Output
-
Voltage - Offset (Vt)
-
Current - Gate to Anode Leakage (Igao)
-
Current - Valley (Iv)
-
Current - Peak
-
Transistor Type
IGBT Transistor
Mounting Type
Through Hole
Product Name:
NCE60TD60BT
Type:
IGBT Transistor
Mounting style
Through Hole
Package / Case:
TO-247-3
MOQ
10 PC
working temperature
-55℃~+150℃
LEAD TIME
3-5 Days
Warranty
30-90 Days
Shipping BY
DHL\UPS\Fedex\EMS\HK Post
Payment
Paypal\TT\Western Union
Packaging and delivery
Selling Units
Single item
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
This product has acquired the relevant product qualification(s)/license(s) of certain applicable country/countries.View more
10 - 999 pieces
$205
>= 1000 pieces
$135
Variations
Select nowSupplier’s customization ability
Minor customization
Drawing-based customization
Sample-based customization
Full customization
Shipping
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