Jeking IRF450 N-CHANNEL POWER MOSFET TRANSISTOR TO-3 IRF 450

Name: Jeking IRF450 N-CHANNEL POWER MOSFET TRANSISTOR TO-3 IRF 450
Brand: Shenzhen Jeking Electronic Corp.
SKU: 60463533150
Price: 0.09 USD
Availability: InStock

Store rating:4.9

(1606 reviews)

Shenzhen Jeking Electronic Corp.

Multispecialty Supplier

11 yrs

Attributes

MOSFET Type

For civil useApplication

TO-3Package Type

Through HoleMounting Type

StandardFET Feature

SingleConfiguration

Manufacturer Part Number:IRF450

Brand Name:Brand

Description:MOSFETs

Place of Origin:Guangdong, China

Package / Case:TO-3-2

Operating Temperature:-

Series:-

Mfg Date Code:-

Supplier Type:Original Manufacturer, ODM, Agency

Media Available:Datasheet, Photo

Voltage - Collector Emitter Breakdown (max):-

Vce Saturation (Max) @ Ib, Ic:-

Current - Collector Cutoff (Max):-

DC Current Gain (hFE) (Min) @ Ic, Vce:-

Power - Max:-

Frequency - Transition:-

Resistor - Base (R1):-

Resistor - Emitter Base (R2):-

FET Type:N-Channel

Drain to Source Voltage (Vdss):500V

Current - Continuous Drain (Id) @ 25°C:12A (Tc)

Rds On (Max) @ Id, Vgs:500mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:4V @ 250uA

Gate Charge (Qg) (Max) @ Vgs:120nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:2700pF @ 25V

Frequency:-

Current Rating (Amps):-

Noise Figure:-

Power - Output:-

Voltage - Rated:-

Drive Voltage (Max Rds On, Min Rds On):10V

Vgs (Max):±20V

IGBT Type:-

Vce(on) (Max) @ Vge, Ic:-

Input Capacitance (Cies) @ Vce:-

Input:-

NTC Thermistor:-

Voltage - Breakdown (V(BR)GSS):-

Current - Drain (Idss) @ Vds (Vgs=0):-

Current Drain (Id) - Max:-

Voltage - Cutoff (VGS off) @ Id:-

Resistance - RDS(On):-

Voltage - Output:-

Voltage - Offset (Vt):-

Current - Gate to Anode Leakage (Igao):-

Current - Valley (Iv):-

Part Number:IRF450

Product Category:MOSFETs

Technology:Si

Mounting Style:Through Hole

Package / Case:TO-3-2

Vds - Drain-Source Breakdown Voltage:400 V

Id - Continuous Drain Current:13 A

Pd - Power Dissipation:150 W

High Power Handling: This N-Channel Power MOSFET Transistor is designed for high power applications, with a drain to source voltage of 500V and a current rating of 12A, making it ideal for demanding power management systems.
Wide Operating Temperature Range: The IRF450 operates within a wide temperature range of -55°C to 150°C (TJ), ensuring reliable performance in various environmental conditions.
Low RDS(on) Value: With a maximum RDS(on) value of 500mOhm @ 12A, 10V, this MOSFET offers low on-resistance, reducing power loss and heat generation.
Compact TO-3 Package: The TO-3 package provides a compact and easy-to-mount design, allowing for efficient use of space in electronic devices.
User-Specific Application: This product is suitable for "civil use" applications, as per the customer's input, making it a reliable choice for various consumer electronic devices.

Show less

Key attributes

Type

MOSFET

Application

For civil use

Package Type

TO-3

Mounting Type

Through Hole

FET Feature

Standard

Configuration

Single

Media Available

Datasheet, Photo

Supplier Type

Original Manufacturer, ODM, Agency

Power - Max

Package / Case

TO-3-2

Description

MOSFETs

Manufacturer Part Number

IRF450

Brand Name

Brand

Place of Origin

Guangdong, China

Operating Temperature

Series

Mfg Date Code

Voltage - Collector Emitter Breakdown (max)

Vce Saturation (Max) @ Ib, Ic

Current - Collector Cutoff (Max)

DC Current Gain (hFE) (Min) @ Ic, Vce

Frequency - Transition

Resistor - Base (R1)

Resistor - Emitter Base (R2)

FET Type

N-Channel

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Rds On (Max) @ Id, Vgs

500mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250uA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 25V

Frequency

Current Rating (Amps)

Noise Figure

Power - Output

Voltage - Rated

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

IGBT Type

Vce(on) (Max) @ Vge, Ic

Input Capacitance (Cies) @ Vce

Input

NTC Thermistor

Voltage - Breakdown (V(BR)GSS)

Current - Drain (Idss) @ Vds (Vgs=0)

Current Drain (Id) - Max

Voltage - Cutoff (VGS off) @ Id

Resistance - RDS(On)

Voltage - Output

Voltage - Offset (Vt)

Current - Gate to Anode Leakage (Igao)

Current - Valley (Iv)

Mounting Type

Through Hole

Type

Field-Effect Transistor

Part Number

IRF450

Product Category

MOSFETs

Technology

Mounting Style

Through Hole

Package / Case

TO-3-2

Vds - Drain-Source Breakdown Voltage

400 V

Id - Continuous Drain Current

13 A

Pd - Power Dissipation

150 W

Packaging and delivery

Selling Units

Single item

Lead time

Product descriptions from the supplier

Report abuse

Warning/Disclaimer

California Proposition 65 Consumer WarningView more

10 - 999 pieces

$0.15

>= 1,000 pieces

$0.09

Quantity

Supplier’s customization ability

Minor customization

Drawing-based customization

Sample-based customization

Full customization

Shipping

Shipping fee and delivery date to be negotiated. Chat with supplier now for more details.

Item subtotal

$0.00

Shipping total

To be negotiated

Subtotal

$0.00

4 interest-free payments with

Alibaba.com order protection

Secure payments

Every payment you make on Alibaba.com is secured with strict SSL encryption and PCI DSS data protection protocols

Money-back protection

Claim a refund if your order doesn't ship, is missing, or arrives with product issues

Quantity (pieces)	1 - 10,000	> 10,000
Lead time (days)	5	To be negotiated

Jeking IRF450 N-CHANNEL POWER MOSFET TRANSISTOR TO-3 IRF 450

Attributes

About this product

Key attributes

Packaging and delivery

Lead time

Product descriptions from the supplier

Quantity

Shipping

Alibaba.com order protection

Secure payments

Money-back protection