New and Original Transistors 100mA 50V BRT SOT-23-3 MMUN2233LT1G
Store rating:4.9
(10 reviews)Complies with EU standards
Complies with EU standards
Attributes
MMUN2233LT1GModel Number
Bipolar Transistors - BJTType
JekingBrand Name
SMD/SMTPackage Type
Digital Transistors 100mA 50V BRT NPNDescription
Guangdong, ChinaPlace of Origin
Package / Case:SOT-23-3
Operating Temperature:- 55 C, + 150 C
Series:MMUN2233L
D/C:Newest
Application:Standard
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (max):50V
Vce Saturation (Max) @ Ib, Ic:250mV
Current - Collector Cutoff (Max):500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Power - Max:246mW
Mounting Type:SMD/SMT, SMD/SMT
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
FET Feature:Standard
Drain to Source Voltage (Vdss):Standard
Vgs(th) (Max) @ Id:Standard
Frequency:Standard
Current Rating (Amps):Standard
Noise Figure:Standard
Power - Output:Standard
Voltage - Rated:Standard
Drive Voltage (Max Rds On, Min Rds On):Standard
Vgs (Max):Standard
Configuration:Single
Input:Standard
NTC Thermistor:Standard
Voltage - Breakdown (V(BR)GSS):Standard
Current Drain (Id) - Max:Standard
Voltage - Cutoff (VGS off) @ Id:Standard
Resistance - RDS(On):Standard
Voltage - Output:Standard
Voltage - Offset (Vt):Standard
Current - Gate to Anode Leakage (Igao):Standard
Current - Valley (Iv):Standard
Current - Peak:100 mA
Product Category:Digital Transistors
DC Collector/Base Gain hfe Min:80, 200
Mounting Style:SMD/SMT
Minimum Operating Temperature:- 55 C
Packaging:Reel, Cut Tape
Product Type:Digital Transistors
Pd - Power Dissipation:246 mW
Subcategory:Transistors
Key attributes
Model Number
MMUN2233LT1G
Type
Bipolar Transistors - BJT
Brand Name
Jeking
Package Type
SMD/SMT
Description
Digital Transistors 100mA 50V BRT NPN
Place of Origin
Guangdong, China
Package / Case
SOT-23-3
Operating Temperature
- 55 C, + 150 C
Series
MMUN2233L
D/C
Newest
Application
Standard
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (Max) @ Ib, Ic
250mV
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Power - Max
246mW
Mounting Type
SMD/SMT, SMD/SMT
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
47 kOhms
FET Feature
Standard
Drain to Source Voltage (Vdss)
Standard
Vgs(th) (Max) @ Id
Standard
Frequency
Standard
Current Rating (Amps)
Standard
Noise Figure
Standard
Power - Output
Standard
Voltage - Rated
Standard
Drive Voltage (Max Rds On, Min Rds On)
Standard
Vgs (Max)
Standard
Configuration
Single
Input
Standard
NTC Thermistor
Standard
Voltage - Breakdown (V(BR)GSS)
Standard
Current Drain (Id) - Max
Standard
Voltage - Cutoff (VGS off) @ Id
Standard
Resistance - RDS(On)
Standard
Voltage - Output
Standard
Voltage - Offset (Vt)
Standard
Current - Gate to Anode Leakage (Igao)
Standard
Current - Valley (Iv)
Standard
Current - Peak
100 mA
Product Category
Digital Transistors
DC Collector/Base Gain hfe Min
80, 200
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Packaging
Reel, Cut Tape
Product Type
Digital Transistors
Pd - Power Dissipation
246 mW
Subcategory
Transistors
Packaging and delivery
Selling Units
Single item
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
50 - 999 pieces
$0.02
>= 1000 pieces
$0.01
Variations
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